FGP10N60UNDF(2012) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGP10N60UNDF Datasheet PDF : 9 Pages
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TTypical Performance Characteristics
Figure 1. Typical Output Characteristics
80
TC = 25oC
70
20V 17V
15V
60
50
40
VGE = 12V
30
20
10
0
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
80
TC = 125oC
70
20V 17V
15V
60
50
40
VGE = 12V
30
20
10
0
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
50
VGE = 15V
TC = 25oC
TC = 125oC
40
Figure 4. Transfer Characteristics
60
Common Emitter
VCE = 20V
50 TC = 25oC
TC = 125oC
40
30
30
20
20
10
10
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
3.5 VGE = 15V
20A
3.0
2.5
10A
2.0
IC = 5A
1.5
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, TC [oC]
0
0
3
6
9
12
15
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
10A
4
20A
IC = 5A
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
FGP10N60UNDF Rev.A
4
www.fairchildsemi.com
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