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FGP10N60UNDF(2012) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FGP10N60UNDF
(Rev.:2012)
Fairchild
Fairchild Semiconductor Fairchild
FGP10N60UNDF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
30
10
td(on)
tr
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
1
0
5
10
15
20
25
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
1000
Eon
100
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
10
TC = 25oC
TC = 125oC
5
0
10 20 30 40 50 60
Gate Resistance, RG []
Figure 17. Turn off Switching
SOA Characteristics
50
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 14. Turn-off Characteristics vs.
Collector Current
300
100
td(off)
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
tf
10
5
0
5
10
15
20
25
Collector Current, IC [A]
Figure 16. Switching Loss vs
Collector Current
1000
Eon
100
Eoff
10
0
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
5
10
15
20
25
Collector Current, IC [A]
Figure 18. Forward Characteristics
30
10
TJ = 125oC
TJ = 75oC
TJ = 25oC
1
0
1
2
3
Forward Voltage, VF [V]
FGP10N60UNDF Rev.A
6
www.fairchildsemi.com

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