FGP10N60UNDF(2012) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGP10N60UNDF Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 19. Reverse Recovery Current
100
TJ = 125oC
10
1
0.1
0.01
TJ = 75oC
TJ = 25oC
1E-3
50
200
400
600
Reverse Voltage, VR [V]
Figure 21. Reverse Recovery Time
100
TC = 25oC
80 TC = 125oC
di/dt = 100A/µs
200A/µs
60
di/dt = 100A/µs
40
200A/µs
20
0
0
2
4
6
8
10 12
Forward Current, IF [A]
Figure 20. Stored Charge
0.3
TC = 25oC
TC = 125oC
0.2
200A/µs
di/dt = 100A/µs
0.1
200A/µs
0.0
0
di/dt = 100A/µs
2
4
6
8
10 12
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
1
0.5
0.5
0.2
0.2
00.1.1 00.1.1
00.0.055
0.02
00..0012
0.01
single pulse
single pulse
00.0.011
0.0051E-5
1E-4
1E-3
0.01
PDM
PDM
t1
t2
Duty Factto1 r, D = t1/t2
DuPteyaFkaTcjto=rP, tDd2 m= xt1Z/tt2hjc + TC
Peak
0.1
Tj
=
Pdm x
1
Zthjc
+
TC
10
0.00001
0.0001 Rectangular P0u.0ls0e1 Duration [sec] 0.01
0.1
Rectangular Pulse Duration [sec]
FGP10N60UNDF Rev.A
7
www.fairchildsemi.com
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