NP0640SAT3G 데이터 시트보기 (PDF) - ON Semiconductor
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NP0640SAT3G Datasheet PDF : 5 Pages
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NP Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics (Note 1)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V(BO)
V
77
88
98
130
160
180
220
240
260
300
350
400
Off−State Voltage (Both Polarities)
VDRM
V
NP0640SxT3G
58
NP0720SxT3G
65
NP0900SxT3G
75
NP1100SxT3G
90
NP1300SxT3G
120
NP1500SxT3G
140
NP1800SxT3G
170
NP2100SxT3G
180
NP2300SxT3G
190
NP2600SxT3G
220
NP3100SxT3G
275
NP3500SxT3G
320
Off State Current
( VD1 = 50 V ) Both Polarities
( VD2 = VDRM ) Both Polarities
IDRM1
IDRM2
2.0
mA
5.0
mA
Holding Current (Both Polarities) (Note 4) VS = 500 V; IT = 2.2 A
IH
150
250
−
mA
On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%)
VT
−
−
4.0
V
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
di/dt
−
(Haefely test method, 1.0 pk < 100 A)
−
500
A/mSec
Critical Rate of Rise of Off−State Voltage
(Linear Waveform, VD = 0.8 VDRM, TJ = 25°C)
CAPACITANCE
dv/dt
5.0
−
−
kV/mSec
Typ
Characteristics
(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)
Symbol
A
B
C
Unit
Co
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
pF
84
129
222
79
123
198
65
122
122
58
95
154
46
75
120
44
70
113
39
59
99
37
59
97
36
56
56
33
52
81
31
47
76
28
44
71
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
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