NTE7141 데이터 시트보기 (PDF) - NTE Electronics

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NTE7141

Integrated Circuit Dual BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output

NTE Electronics 

Electrical Characteristics (Cont’d): (V+ = +15V, V– = –15V unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Maximum Output Voltage

Supply Current, For Both Amps

Total Device Dissipation

Temperature Coefficient of

Input Offset Voltage

VOM+

VOM–

VOM+

VOM–

I+

PD

∆VIO/∆T

TA = +25°C, RL = 2kΩ

TA = +25°C, Note 3

TA = –40° to +85°C, RL = 2kΩ

TA = +25°C

TA = –40° to +85°C

TA = +25°C

TA = –40° to +85°C

TA = –40° to +85°C

+12 +13 –

–14 –14.4 –

0.4 0.13 –

– +12.4 –

– –14.2 –

–

8 12

– 8.4 –

– 240 360

– 252 –

– 15 –

V

V

V

V

V

mA

mA

mW

mW

µA/°C

Input Resistance

Input Capacitance

Output Resistance

Equivalent Wideband Input Noise

Voltage

RI TA = +25°C

CI TA = +25°C

RO TA = +25°C

en TA = +25°C, f = 1kHz

RS = 100Ω

f = 10kHz

– 1.5 –

TΩ

–

4

–

pF

– 60 –

Ω

– 40 – nV/√Hz

– 12 – nV/√Hz

Short–Circuit Current to Opposite

Supply

Source

Sink

Gain–Bandwidth Product

Slew Rate

Transient Response:

Rise Time

Overshoot

IOM+

IOM–

fT

SR

TA = +25°C

TA = +25°C

TA = +25°C

tr

TA = +25°C, RL = 2kΩ, CL = 100pF

– 40

mA

– 11 –

mA

– 4.5 – MHz

–

9

– V/µs

– 0.08 –

µs

– 10 –

%

Setting Time at 10VP–P

1mV

10mV

ts

TA = +25°C, RL = 2kΩ, CL = 100pF,

– 4.5 –

µs

Voltage Follower

– 1.4 –

µs

Crosstalk

CT TA = +25°C, f = 1kHz

– 120 –

dB

Note 3. V+ = 5V, V– = GND, ISink = 200µA.

Electrical Characteristics: (TA = +25°C, V+ = +5V, V– = –5V unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Input Offset Voltage

Input Offset Current

Input Current

Input Resistance

|VIO|

|IIO|

II

RI

–

5

– mV

– 0.1 – pA

–

2

–

pA

–

1

– TΩ

Large–Signal Voltage Gain

AOL

– 100k – V/V

– 100 – dB

Common–Mode Rejection Ratio

CMRR

– 32 320 µV/V

70 90 – dB

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