C62702-C748 데이터 시트보기 (PDF) - Siemens AG

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C62702-C748

PNP Silicon AF Transistor

Siemens AG 

BC 369

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 30 mA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 1 µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

Emitter cutoff current

VEB = 5 V

DC current gain

IC = 5 mA; VCE = 10 V

IC = 500 mA; VCE = 1 V1)

IC = 1 A; VCE = 1 V1)

Collector-emitter saturation voltage1)

IC = 1 A; IB = 100 mA

Base-emitter voltage1)

IC = 5 mA; VCE = 10 V

IC = 1 A; VCE = 1 V

AC characteristics

Transition frequency

IC = 100 mA, VCE = 5 V, f = 20 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 20

V(BR)CB0 25

V(BR)EB0 5

ICB0

–

–

IEB0

–

hFE

50

85

60

VCEsat

–

VBE

–

–

–

–

V

–

–

–

–

–

100 nA

–

10

µA

–

100 nA

–

–

–

160 375

–

–

–

0.5 V

0.6 –

–

1

fT

–

100 –

MHz

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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