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NTE308P

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

NTE Electronics 

NTE308P

Integrated Thyristor/Rectifier (ITR)

TV Horizontal Deflection & Commutating Switch

Absolute Maximum Ratings:

Repetitive Peak Forward Off–State Voltage (TC = +85°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 750V

Repetitive Peak Reverse Voltage (TC = +85°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 700V

Mean On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IO, IT(AV)

Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A

SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A

RMS On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IF(RMS), IT(RMS)

Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A

SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A

Surge Current (TC = +85°C, One Full Cycle), ITSM, IFSM

60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A

50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A

Rate of Change of On–State Current (VD = 700V, IGT = 50mA, tr = 0.1µs), di/dt . . . . . . . . . 200A/µs

Peak Forward Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PGM . . . . . . . . . . 25W

Peak Reverse Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PRGM . . . . . . . . 25W

Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W

Lead Temperature (During Soldering, 1/8” from case, 10sec max), TL . . . . . . . . . . . . . . . . . . +225°C

Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively

biased.

Note 2. Any product of gate current and gate voltage which results in a gate power less than the maxi-

mum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded.

Electrical Characteristics: (TC = +25°C “Maximum Ratings” unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Forward Blocking Current

IDRM VD = 700V, TC = +85°C

– 0.5 1.5 mA

Instantaneuos Voltage

Rectifier

VF IF = 10A

– 1.35 2.0 V

SCR

VT IT = 30A

– 1.75 3.0 V

Gate Trigger Current, Continuous DC

IGT Anode Voltage = 12V, RL = 30Ω

– 15 45 mA

Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 30Ω

– 1.8 4.0 V

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