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NE6501077_00

L/S BAND MEDIUM POWER GaAs MESFET

California Eastern Laboratories. 

L/S BAND MEDIUM POWER GaAs MESFET NE6501077

FEATURES

• HIGH OUTPUT POWER: 10 W

• HIGH LINEAR GAIN: 10.5 dB

• HIGH EFFICIENCY: 40%

• INDUSTRY STANDARD PACKAGING

DESCRIPTION

The NE6501077 is a medium power GaAs MESFET designed

for up to a 10 W output stage or as a driver for high power

devices. The device has no internal matching and can be used

from UHF frequencies up to 3.0 GHz. The chips used in this

series offer superior reliability and consistent performance for

which NEC microwave semiconductors are known.

The NE6501077 transistors are manufactured to NEC's strin-

gent quality assurance standards to ensure highest reliability

and consistent superior performance.

RECOMMENDED OPERATING LIMITS

SYMBOLS PARAMETERS

UNITS MIN TYP MAX

VDS

Drain to Source Voltage

V

TCH

Channel Temperature

°C

GCOMP Gain Compression

dB

RG

Gate Resistance

Ω

10 10

130

3.0

100

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C unless otherwise noted)

SYMBOLS

PARAMETERS

UNITS RATINGS

VDSX

Drain to Source Voltage

V

15

VGDX

Gate to Drain Voltage

V

-18

VGSX

Gate to Source Voltage

V

-12

IDS

Drain Current

A

9.0

IGS

Gate Current

mA

50

PT

Total Power Dissipation

W

50

TCH

Channel Temperature

°C

175

TSTG

Storage Temperature

°C -65 to +175

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 77

17.5±0.5

14.3

1.0 ± 0.1

SOURCE

GATE

2.5

R1.25, 2 PLACES

DRAIN

2.26 ±0.4

+0.06

0.1-0.02

8.9±0.4

0.2 MAX

6.35±0.4

4.0 MIN BOTH

LEADS

3.8 MAX

1.0

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

PACKAGE OUTLINE

SYMBOLS

CHARACTERISTICS

POUT

Power Out at Fixed Input Power

GL

Linear Gain

ηADD

Power Added Efficiency

IDS

Drain Source Current

IDSS

Saturated Drain Current

VP

Pinch-off Voltage

gm

Transconductance

RTH

Thermal Resistance

UNITS

dBm

dB

%

A

A

V

mS

°C/W

NE6501077

77

MIN

TYP

MAX

39.0

39.5

9.5

10.5

40

2.0

2.0

4.5

7.0

-3.5

-2.0

-0.5

2600

2.5

3.0

TEST CONDITIONS

PIN = 31.0 dBm

f = 2.3 GHz

VDS = 10 V; IDSQ = 1A

RG = 100Ω

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 15 mA

VDS = 2.5 V; IDS = 2 A

Channel to Case

California Eastern Laboratories

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