33N25G-T47-T 데이터 시트보기 (PDF) - Unisonic Technologies
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33N25G-T47-T Datasheet PDF : 5 Pages
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33N25
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
(VGS=10V) TC=25°C
ID
33
A
Pulsed
IDM
132
A
Single Pulsed Avalanche Energy (Note 2)
EAS
918
mJ
Power Dissipation
Derate above 25°C
PD
235
W
1.89
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. Starting TJ = 25°C, L = 1.35mH, IAS = 33A, VDD=50V, RG=25Ω.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
0.53
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage
Forward
Current
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=250V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=33A
VGS=6.0V, ID=15A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain Charge
Turn-ON Time
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
QG
QGS
QGD
tON
tD(ON)
tR
tD(OFF)
VGS=10V, VDD=50V,
ID=33A, IG=1.0mA
VDD=50V, ID=33A, VGS=10V,
RGS=16Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD ISD=33A
Notes: 1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration=300µs, Duty cycle ≤2%.
MIN TYP MAX UNIT
250
V
1 µA
+100 nA
-100 nA
2.0
4.0 V
80 mΩ
80 mΩ
1250
pF
190
pF
45
pF
18.5 28 nC
6.5
nC
4.6
nC
35 80 ns
230
ns
75
ns
120
ns
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-814.b
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