BAS17 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS17

Low-voltage stabistor

NXP Semiconductors. 

NXP Semiconductors

Low-voltage stabistor

Product data sheet

BAS17

FEATURES

• Low-voltage stabilization

• Forward voltage range: 580 to 960 mV

• Total power dissipation: max. 250 mW.

APPLICATIONS

• Low-voltage stabilization e.g.

– Bias stabilizer in class-B output stages

– Clipping

– Clamping

– Meter protection.

DESCRIPTION

Low-voltage stabilization diode in a small SOT23 plastic

package.

PINNING

PIN

1

2

3

DESCRIPTION

anode

not connected

cathode

handbook, halfpa2ge

1

2

n.c.

3

1

3

MAM185

MARKING

TYPE NUMBER

BAS17

MARKING CODE(1)

∗A9

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

Fig.1 Simplified outline (SOT23),

pin configuration and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VR

continuous reverse voltage

IF

continuous forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

Tamb = 25 °C

MIN.

−

−

−

−65

−

MAX.

5

200

250

+150

150

UNIT

V

mA

mW

°C

°C

2003 Mar 25

2

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