NTE269 데이터 시트보기 (PDF) - NTE Electronics

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NTE269

NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 4)

V(BR)CEO IC = 10mA, Note 4

ICBO VCB = 50V, IE = 0, TJ = +150°C

ICES VCE = 50V, VBE = 0

IEBO VEB = 13V, IC = 0

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

IC = 200mA, VCE = 5V

IC = 1.5A, VCE = 5V

IC = 1.5A, IB = 3mA

IC = 1.5A, IB = 3mA

Collector Capacitance

NTE268

NTE269

Ccb

VCB = 10V, IE = 0, f = 1MHz

High Frequency Current Gain

|hfe| IC = 20mA, VCE = 5V, f = 100MHz

Min Typ

50 –

–

–

–

–

–

–

10000 –

1000 –

–

–

–

–

–

–

–

–

1.0 –

Max Unit

–V

20 µA

0.5 µA

100 nA

–

–

1.5 V

2.5 V

10 pF

25 pF

–

Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

NTE268

C

B

E

NTE269

C

B

E

.380 (9.56)

.180 (4.57)

C

.132 (3.35) Dia

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

.400

(10.16)

Min

E BC

.100 (2.54)

.100 (2.54)

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