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NAND04GW3C2N1E 데이터 시트보기 (PDF) - STMicroelectronics

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NAND04GW3C2N1E Datasheet PDF : 51 Pages
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6 Device operations
6
Device operations
NAND04GA3C2A, NAND04GW3C2A
The following section gives the details of the device operations.
6.1
Read memory array
At Power-Up the device defaults to Read mode. To enter Read mode from another mode the
Read command must be issued, see Table 8: Commands. Once a Read command is
issued, subsequent consecutive Read commands only require the confirm command code
(30h).
Once a Read command is issued two types of operations are available: Random Read and
Page Read.
6.2
Random Read
Each time the Read command is issued the first read is Random Read.
6.3
Page read
After the first Random Read access, the page data (2112 Bytes) is transferred to the Page
Buffer in a time of tWHBH (refer to Table 20 for value). Once the transfer is complete the
Ready/Busy signal goes High. The data can then be read out sequentially (from selected
column address to last column address) by pulsing the Read Enable signal.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during Cache Read operations.
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