NAND04GW3C2N1E 데이터 시트보기 (PDF) - STMicroelectronics

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NAND04GW3C2N1E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

12 DC and AC parameters

12 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics Tables that

follow, are derived from tests performed under the Measurement Conditions summarized in

Table 16: Operating and AC Measurement Conditions. Designers should check that the

operating conditions in their circuit match the measurement conditions when relying on the

quoted parameters.

The DC and AC characteristics for VDDQ 1.8V devices are not yet available.

Table 16. Operating and AC Measurement Conditions

Parameter

NAND04GA3C2A,

NAND04GW3C2A

Min

Max

Units

Supply Voltage (VDD)

Ambient Temperature (TA)

1.8V, VDDQ devices

3V, VDDQ devices

Grade 1

Grade 6

1.7

1.95

V

2.7

3.6

V

0

70

°C

–40

85

°C

Load Capacitance (CL) (1 TTL GATE and CL)

Input Pulses Voltages

Input and Output Timing Ref. Voltages

Output Circuit Resistor Rref

Input Rise and Fall Times

1.8V VDDQ devices

30

pF

3V, VDDQ devices (2.7 - 3.6V)

50

pF

1.8V, VDDQ devices

0

VDD

V

3V, VDDQ devices

0.4

2.4

V

1.8V, VDDQ devices

0.9

V

3V, VDDQ devices

1.5

V

8.35

kΩ

5

ns

Table 17. Capacitance(1)

Symbol

Parameter

Test Condition

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0V

CI/O

Input/Output Capacitance

VIL = 0V

1. TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested.

10

pF

10

pF

35/51

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