VS-SD203N25S20PC 데이터 시트보기 (PDF) - Vishay Semiconductors
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VS-SD203N25S20PC Datasheet PDF : 10 Pages
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VS-SD203N/R Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS current
Maximum peak, one-cycle
non-repetitive forward current
Maximum I2t for fusing
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
SYMBOL
TEST CONDITIONS
IF(AV)
IF(RMS)
IFSM
I2t
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
Ipk = 628 A, TJ = 25 °C, tp = 400 μs square pulse
VALUES
200
85
314
4990
5230
4200
4400
125
114
88
81
1250
1.00
1.47
1.10
0.46
1.65
UNITS
A
°C
A
kA2s
kA2s
V
mW
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
trr at 25 % IRRM
(μs)
TEST CONDITIONS
Ipk
SQUARE dI/dt
Vr
PULSE (A/μs) (V)
(A)
S10
1.0
S15
1.5
750
25
-30
S20
2.0
TYPICAL VALUES
AT TJ = 125 °C
trr at 25 % IRRM
Qrr
Irr
(μs)
(μC)
(A)
2.4
52
33
2.9
90
44
3.2
107
46
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TJ
TStg
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Mounting torque ± 10 %
Not-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet)
VALUES
-40 to 125
-40 to 150
UNITS
°C
0.115
K/W
0.08
31
Nm
24.5
250
g
DO-9 (DO-205AB)
Revision: 11-Jan-18
2
Document Number: 93170
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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