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SM15T220A-M3/57T 데이터 시트보기 (PDF) - Vishay Semiconductors

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SM15T220A-M3/57T
Vishay
Vishay Semiconductors Vishay
SM15T220A-M3/57T Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
SM15T Series
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
SMC (DO-214AB)
PRIMARY CHARACTERISTICS
VWM
VBR uni-directional
VBR bi-directional
PPPM
PD
IFSM (uni-directional only)
TJ max.
Polarity
5.8 V to 188 V
6.8 V to 220 V
6.8 V to 220 V
1500 W
6.5 W
200 A
150 °C
Uni-directional, bi-directional
Package
SMC (DO-214AB)
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATION NOTES
A 1500 W (SMCJ) device is normally selected when the
threat of transients is from lightning induced transients,
conducted via external leads or I/O lines. It is also used to
protect against switching transients induced by large coils
or industrial motors. Source impedance at component level
in a system is usually high enough to limit the current within
the peak pulse current (IPP) rating of this series. In an
overstress condition, the failure mode is a short circuit.
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM15T12CA).
Electrical characteristics apply in both directions.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 3) (1)
PPPM
IPPM
Power dissipation on infinite heatsink TA = 50 °C
PD
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
IFSM
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
VALUE
1500
See next table
6.5
200
-65 to +150
UNIT
W
A
W
A
°C
Revision: 16-Jan-18
1
Document Number: 89427
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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