MAX17604 데이터 시트보기 (PDF) - Maxim Integrated
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MAX17604 Datasheet PDF : 12 Pages
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MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
VDD, INA, INB, ENA, ENB to GND.........................-0.3V to +16V
OUTA, OUTB to GND.............................................-0.3V to +16V
Junction Operating Temperature Range.......... -40NC to +125NC
Continuous Power Dissipation (TA = +70NC)
8-Pin TDFN (derate 23.8mW/NC above +70NC).........1904mW
8-Pin SO (derate 74mW/NC above +70NC).............. 588.2mW*
8-Pin FMAX (derate 12.9mW/NC above +70NC)......1030.9mW
Operating Temperature Range......................... -40NC to +125NC
Junction Temperature.................................................... +150NC
Storage Temperature Range............................. -65NC to +150NC
Lead Temperature (soldering, 10s).................................+300NC
Soldering Temperature (reflow).......................................+240NC
*As per JEDEC 51 standard.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (BJA)...........42NC/W
Junction-to-Case Thermal Resistance (BJC)..................8NC/W
SO
Junction-to-Ambient Thermal Resistance (BJA).........136NC/W
Junction-to-Case Thermal Resistance (BJC)................38NC/W
FMAX
Junction-to-Ambient Thermal Resistance (BJA)........77.6NC/W
Junction-to-Case Thermal Resistance (BJC)..................5NC/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(VDD = 12V, CL = 0F, at TA = -40NC to +125NC, unless otherwise noted. Typical values are specified at TA = +25NC. Parameters
specified at VDD = 4V apply to the TTL versions only.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
POWER SUPPLY (VDD)
VDD Operating Range
TTL versions
VDD
HNM versions
VDD Undervoltage Lockout
VDD UVLO Hysteresis
VDD UVLO to OUT_ Delay
VDD Supply Current
UVLO VDD rising
IDD_Q
IDD_SW
VDD rising
Not switching, VDD = 14V (Note 3)
VDD = 4.5V, CL = 1nF, both channels
switching at 1MHz
DRIVER OUTPUT (SOURCE) (OUTA, OUTB)
Peak Output Current (Sourcing)
Driver Output Resistance Pulling Up
(Note 4)
IPK-P
RON-P
DRIVER OUTPUT (SINK) (OUTA, OUTB)
VDD = 14V, CL = 10nF (Note 3)
VDD = 14V, IOUT_ = 100mA
VDD = 4V, IOUT_ = 100mA
Peak Output Current (Sinking)
Driver Output Resistance Pulling
Down (Note 4)
IPK-N
RON-N
VDD = 14V, CL = 10nF (Note 3)
VDD = 14V, IOUT_ = -100mA
VDD = 4V, IOUT_ = -100mA
MIN TYP MAX UNITS
4
14
V
6
14
3
3.5 3.85
V
200
mV
120
Fs
1
2
mA
12
18
4
A
0.88 1.85
I
0.91 1.95
4
A
0.5 0.95
I
0.52
1
2
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