2SD2654TLV 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2654TLV Datasheet PDF : 4 Pages
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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
60
−
−
V IC=10µA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO
12
−
−
V IE=10µA
Collector cutoff current
ICBO
−
−
0.3 µA VCB=50V
Emitter cutoff current
IEBO
−
−
0.3 µA VEB=12V
Collector-emitter saturation voltage
VCE(sat)
−
−
0.3
V IC/IB=50mA/5mA
∗
DC current transfer ratio
hFE
820
− 2700 − VCE/IC=5V/1mA
∗
Transition frequency
fT
− 250 − MHz VCE=5V, IE=−10mA, f=100MHz
∗
Output capacitance
Cob
−
3.5
−
pF VCB=5V, IE=0A, f=1MHz
∗ Measured using pulse current.
zElectrical characteristics curves
2.0
Ta=25°C
1.2µA
1.6 2.0µA
1.8µA
1.6µA
1.2 1.4µA
1.0µA
0.8µA
0.6µA
0.8
0.4µA
0.4
0.2µA
IB=0
00
0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics ( Ι )
200
500µA
160 450µA
400µA
350µA
300µA
120
250µA
200µA
150µA
100µA
80
50µA
40
Ta=25°C
Measured
using pulse current
00
4
8
12
IB=0
16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
200
VCE=5V
100
50
20
10
5
2
1
0.5
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured
using pulse current
VCE=10V
5V
3V
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
10000
5000
2000
1000
500
Ta=100°C
25°C
VCE=5V
Measured
using pulse current
−25°C
200
100
50
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
1000
500
Ta=25°C
200
100
IC / IB=50
50
20
20
10
10
5
2
1
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
Rev.A
2/3
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