STB7N52K3(2008) 데이터 시트보기 (PDF) - STMicroelectronics

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STB7N52K3
(Rev.:2008)

N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET

STMicroelectronics 

STB7N52K3 - STD7N52K3

STF7N52K3 - STP7N52K3

N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220

SuperMESH3™ Power MOSFET

Preliminary Data

Features

Type

VDSS

RDS(on)

max

ID

Pw

STB7N52K3

STD7N52K3

STF7N52K3

STP7N52K3

525 V

525 V

525 V

525 V

< 0.98 Ω 6.3 A 90 W

< 0.98 Ω 6.3 A 90 W

< 0.98 Ω 6.3 A(1) 25 W

< 0.98 Ω 6.3 A 90 W

1. Limited by package

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Improved diode reverse recovery

characteristics

■ Zener-protected

Application

■ Switching applications

Description

The new SuperMESH3™ series is obtained

through the combination of a further fine tuning of

ST's well established strip-based PowerMESH™

layout with a new optimization of the vertical

structure. In addition to reducing on-resistance

significantly versus previous generation, special

attention has been taken to ensure a very good

dv/dt capability and higher margin in breakdown

voltage for the most demanding application.

Table 1. Device summary

Order codes

Marking

STB7N52K3

STD7N52K3

STF7N52K3

STP7N52K3

7N52K3

7N52K3

7N52K3

7N52K3

3

1

D²PAK

3

1

DPAK

3

2

1

TO-220

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

Package

D²PAK

DPAK

TO-220FP

TO-220

Packaging

Tape and reel

Tape and reel

Tube

Tube

July 2008

Rev 1

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

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