STD10P6F6(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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STD10P6F6
(Rev.:2012)

P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD10P6F6, STP10P6F6

(TCASE = 25 °C unless otherwise specified)

Table 4.

Symbol

Static

Parameter

V(BR)DSS

Drain-source breakdown

Voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source

on-resistance

Test conditions

ID = 250 µA, VGS= 0

VDS = 60 V

VDS = 60 V, Tc = 125 °C

VGS = ± 20 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 5 A

Min.

60

2

Typ.

0.15

Max. Unit

V

1 µA

10 µA

±100 nA

4

V

0.18 Ω

Table 5.

Symbol

Dynamic

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

VDS = 48 V, f=1 MHz,

VGS = 0

VDD = 48V, ID = 10 A

VGS = 10 V

Figure 3

Min Typ. Max. Unit

360

pF

-

55

- pF

28

pF

7

nC

-

1.4

- nC

2

nC

Warning: For the P-channel Power MOSFET the actual polarity of the

voltages and the current must be reversed.

4/15

Doc ID 022967 Rev 2

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