STP10P6F6 데이터 시트보기 (PDF) - STMicroelectronics

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STP10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10P6F6, STF10P6F6,

STP10P6F6, STU10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6

Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Datasheet − production data

TAB

3

1

DPAK

TAB

3

2

1

TO-220FP

TAB

3

2

1

TO-220

3

2

1

IPAK

Figure 1. Internal schematic diagram

, TAB

Features

Order codes

STD10P6F6

STF10P6F6

STP10P6F6

STU10P6F6

VDS

-60 V

RDS(on) max

0.16 Ω

• Very low on-resistance

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

ID

-10 A

Applications

• Switching applications

Description

These devices are P-channel Power MOSFETs

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFETs exhibit very low RDS(on) in all

packages.

Order codes

STD10P6F6

STF10P6F6

STP10P6F6

STU10P6F6

AM11258v1

Table 1. Device summary

Marking

Package

DPAK

10P6F6

TO-220FP

TO-220

IPAK

Packing

Tape and reel

Tube

July 2015

This is information on a product in full production.

DocID022967 Rev 5

1/24

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