IRFB4212PBF 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

제조사

IRFB4212PBF

DIGITAL AUDIO MOSFET

International Rectifier 

IRFB4212PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

RG(int)

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Coss

LD

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Internal Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Effective Output Capacitance

Internal Drain Inductance

100 ––– ––– V VGS = 0V, ID = 250µA

––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA

e ––– 58 72.5 mΩ VGS = 10V, ID = 13A

3.0 ––– 5.0

V VDS = VGS, ID = 250µA

––– -13 ––– mV/°C

––– ––– 20 µA VDS = 100V, VGS = 0V

––– ––– 250

VDS = 100V, VGS = 0V, TJ = 125°C

––– ––– 200 nA VGS = 20V

––– ––– -200

VGS = -20V

11 ––– ––– S VDS = 50V, ID = 13A

––– 15 23

––– 3.3 –––

VDS = 80V

––– 1.4 ––– nC VGS = 10V

––– 6.9 –––

ID = 13A

––– 3.4 –––

See Fig. 6 and 19

––– 8.3 –––

––– 2.2 –––

––– 7.7 –––

––– 28 –––

––– 14 –––

––– 3.9 –––

Ω

Ãe VDD = 50V, VGS = 10V

ID = 13A

ns RG = 2.5Ω

––– 550 –––

––– 66 –––

––– 35 –––

VGS = 0V

pF VDS = 50V

ƒ = 1.0MHz,

See Fig.5

––– 350 –––

––– 4.5 –––

VGS = 0V, VDS = 0V to 80V

Between lead,

D

LS

Internal Source Inductance

nH 6mm (0.25in.)

G

––– 7.5 –––

from package

S

and center of die contact

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

EAR

Ãg Avalanche Current

g Repetitive Avalanche Energy

Typ.

Max.

–––

25

See Fig. 14, 15, 17a, 17b

Units

mJ

A

mJ

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS @ TC = 25°C Continuous Source Current

––– ––– 18

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

––– ––– 57

––– ––– 1.3

integral reverse

p-n junction diode.

e V TJ = 25°C, IS = 13A, VGS = 0V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– 41

62

ns TJ = 25°C, IF = 13A

e ––– 69 100 nC di/dt = 100A/µs

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

‚ Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS = 13A.

ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.

„ Rθ is measured at TJ of approximately 90°C.

… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive

avalanche information

2

www.irf.com

Share Link: