STPS40M100CR 데이터 시트보기 (PDF) - STMicroelectronics

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STPS40M100CR

100 V, 40 A power Schottky rectifier

STMicroelectronics 

STPS40M100C

Characteristics (curves)

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

IR (mA)

1.E+02

1.E+01

Tj=150 °C

Tj=125 °C

1.E+00

Tj=100 °C

Tj=75 ° C

1.E-01

Tj=50 ° C

1.E-02

Tj=25 ° C

VR (V)

1.E-03

0 1 0 20 30 40 50 60 70 80 90 100

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

C(pF)

10000

F=1 MHz

Vosc=30 mVRMS

Tj=25 °C

1000

100

1

VR(V)

10

100

Figure 7. Forward voltage drop versus forward current (per diode)

IF (A)

40

35

30

25

Tj=125 °C

(Maximum values)

20

15

Tj=125 °C

(Typical values)

10

Tj=25 °C

(Maximum values)

5

VF (V)

0

0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

DS6170 - Rev 4

page 5/12

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