STPS40SM100CT 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40SM100CT Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS40SM100C
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward current rms
IF(AV) Average forward current δ = 0.5
IFSM Surge non repetitive forward current
PARM(1) Repetitive peak avalanche power
VARM (2) Maximum repetitive peak avalanche voltage
VASM (2) Maximum single pulse peak avalanche voltage
Tstg Storage temperature range
Tj
Maximum operating junction temperature (3)
100
V
60
A
Tc = 130 °C Per diode
20
A
Tc = 125 °C Per device
40
tp = 10 ms sinusoidal
530
A
tp = 1 µs Tj = 25 °C
18000
W
tp < 1 µs Tj < 150 °C
IAR < 45 A
120
V
tp < 1 µs Tj < 150 °C
IAR < 45 A
120
V
-65 to + 175 °C
150
°C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 11.
3.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
Per diode
Total
1.3
0.7
°C/W
0.1
Table 4. Static electrical characteristics (per diode, at 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = 70 V
VR = 100 V
IF = 5 A
IF = 10A
IF = 20 A
7
µA
7
mA
13
45
µA
13
45 mA
520
435
620 700
mV
520 580
740 810
605 665
To evaluate the conduction losses use the following equation:
P = 0.580 x IF(AV) + 0.0043 x IF2(RMS)
2/9
Doc ID 15525 Rev 2
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