PHPT61003PY
100 V, 3A PNP high power bipolar transistor
13 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61003NY
2. Features and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Power management
• Loadswitch
• Linear mode voltage regulator
• Backlighting applications
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
tp ≤ 1 ms; single pulse
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
-100 V
-
-
-3
A
-
-
-8
A
-
110 180 mΩ
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