PHPT61003PYX 데이터 시트보기 (PDF) - NXP Semiconductors.

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PHPT61003PYX

100 V, 3A PNP high power bipolar transistor

NXP Semiconductors. 

PHPT61003PY

100 V, 3A PNP high power bipolar transistor

13 January 2014

Product data sheet

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT61003NY

2. Features and benefits

• High thermal power dissipation capability

• Suitable for high temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

3. Applications

• Power management

• Loadswitch

• Linear mode voltage regulator

• Backlighting applications

4. Quick reference data

Table 1.

Symbol

VCEO

IC

ICM

RCEsat

Quick reference data

Parameter

Conditions

collector-emitter

voltage

open base

collector current

peak collector current

collector-emitter

saturation resistance

tp ≤ 1 ms; single pulse

IC = -2 A; IB = -200 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

Min Typ Max Unit

-

-

-100 V

-

-

-3

A

-

-

-8

A

-

110 180 mΩ

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