PHPT61003PYX 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT61003PYX Datasheet PDF : 15 Pages
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NXP Semiconductors
PHPT61003PY
100 V, 3A PNP high power bipolar transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
fT
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -80 V; IE = 0 A; Tamb = 25 °C
VCB = -80 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = -8 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
VCE = -10 V; IC = -1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
collector-emitter
saturation voltage
VCE = -10 V; IC = -2 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = -10 V; IC = -3 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -500 mA; IB = -50 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter turn-on
voltage
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -100 mA; Tamb = 25 °C
delay time
rise time
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
transition frequency
VCE = -10 V; IC = -100 mA;
f = 100 MHz; Tamb = 25 °C
PHPT61003PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 January 2014
Min Typ Max Unit
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
150 220 -
80
210 -
20
100 -
10
40
-
-
-70 -110 mV
-
-220 -360 mV
-
110 180 mΩ
-
-0.91 -1
V
-
-1.02 -1.2 V
-
-0.68 -0.9 V
-
20
-
ns
-
180 -
ns
-
200 -
ns
-
350 -
ns
-
220 -
ns
-
570 -
ns
-
125 -
MHz
© NXP N.V. 2014. All rights reserved
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