PHPT61003PYX 데이터 시트보기 (PDF) - NXP Semiconductors.

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PHPT61003PYX

100 V, 3A PNP high power bipolar transistor

NXP Semiconductors. 

NXP Semiconductors

PHPT61003PY

100 V, 3A PNP high power bipolar transistor

Symbol

Cc

500

hFE

400

300

200

100

Parameter

collector capacitance

Conditions

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

aaa-010858

(1)

(2)

2.5

-45

IC

(A)

-40

2.0 -35

-30

1.5

1.0

(3)

0.5

Min Typ Max Unit

-

30

-

pF

IB = -50 mA

aaa-010859

-25

-20

-15

-10

-5

0

-10-1

-1

-10

-102

-103

-103

IC (mA)

VCE = −10 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collector

current; typical values

1.6

aaa-010860

VBE

(V)

1.2

(1)

0.8

(2)

(3)

0.4

0

0

1

2

3

4

5

VCE (V)

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

1.2

VBEsat

(V)

1.0

0.8

0.6

0.4

aaa-010861

(1)

(2)

(3)

0

10-1

1

10

102

103

104

IC (mA)

VCE = −2 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 6. Base-emitter voltage as a function of collector

current; typical values

0.2

-10-1

-1

-10

-102

-103

-104

IC (mA)

IC/IB = 20

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. Base-emitter saturation voltage as a function of

collector current; typical values

PHPT61003PY

Product data sheet

All information provided in this document is subject to legal disclaimers.

13 January 2014

© NXP N.V. 2014. All rights reserved

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