2SB562 데이터 시트보기 (PDF) - Unisonic Technologies

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2SB562

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SB562

PNP EPITAXIAL SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-25

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

-20

V

VEBO

-5

V

Collector Current

Ic

-1

A

Collector Peak Current

IC (peak)

-1.5

A

Collector Power Dissipation

Junction Temperature

PC

0.9

W

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector to Base Breakdown Voltage

V(BR)CBO IC=-10A, IE=0

-25

V

Collector to Emitter Breakdown Voltage V(BR)CEO IC=-1mA, RBE=

-20

V

Emitter to Base Breakdown Voltage

V(BR)EBO IE=-10A, IC=0

-5

V

Collector Cut-Off Current

ICBO VCB=-20V, IE=0

-1

μA

DC Current Transfer Ratio

hFE VCE=-2V, IC=-0.5A (note)

85

240

Collector to Emitter Saturation Voltage VCE(sat) IC=-0.8A, IB=-0.08A (note)

-0.2 -0.5

V

Base to Emitter Voltage

VBE VCE=-2V, IC=-0.5A (note)

-0.8 -1.0

V

Gain Bandwidth Product

fT

VCE=-2V, IC=-0.5A (note)

350

MHz

Collector Output Capacitance

Cob VCB=-10V, IE=0, f=1MHz

38

pF

Note 1: Pulse test

 CLASSIFICATION OF hFE

RANK

RANGE

B

85 - 170

C

120 - 240

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R211-004.C

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