VP2106(2011) 데이터 시트보기 (PDF) - Supertex Inc

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VP2106
(Rev.:2011)

P-Channel Enhancement-Mode Vertical DMOS FET

Supertex Inc 

VP2106

Typical Performance Curves (cont.)

BVDSS Variation with Temperature

-1.1

-1.0

-0.9

-50

0

50

100

150

Tj (OC)

Transfer Characteristics

-1.0

VDS = -25V

TA = -55OC

-0.8

-0.6

25OC

-0.4

125OC

-0.2

0

0

-2.0

-4.0

-6.0

-8.0

-10

VGS (volts)

Capacitance vs. Drain-to-Source Voltage

100

f = 1.0MHz

75

50

25

00

CISS

COSS

CRSS

-10

-20

-30

-40

VDS (volts)

On-Resistance vs. Drain Current

20

16

12

VGS = -5.0V

8.0

6.0

VGS = -10V

4.0

2.0

00

-0.2

-0.4

-0.6

-0.8

-1.0

ID (amperes)

V(th) and RDS Variation with Temperature

2.0

1.4

1.6

RDS(ON) @ -10V. 0.5A

1.2

1.2

1.0

0.8

0.8

V(th) @ 1.0mA

0.4

0.6

0

-50

0

50

100

150

Tj (OC)

Gate Drive Dynamic Characteristics

-10

-8.0

VDS = -10V

VDS = -40V

-6.0

101 pF

-4.0

-2.0

35 pF

0

0

1.0

2.0

QG (nanocoulombs)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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