SPA16N50C3 데이터 시트보기 (PDF) - Infineon Technologies

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SPA16N50C3

Cool MOS™ Power Transistor

Infineon Technologies 

SPP16N50C3, SPB16N50C3

SPI16N50C3, SPA16N50C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 400 V, ID = 16 A, Tj = 125 °C

Symbol

dv/dt

Value

50

Unit

V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - case, FullPAK

Thermal resistance, junction - ambient, leaded

Thermal resistance, junction - ambient, FullPAK

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s3)

Symbol

RthJC

RthJC_FP

RthJA

RthJA FP

Tsold

Values

min. typ. max.

-

- 0.78

-

-

3.7

-

-

62

-

-

80

-

- 260

Unit

K/W

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500

-

-V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=16A

-

600

-

Gate threshold voltage

VGS(th) ID=675µA, VGS=VDS 2.1

3

3.9

Zero gate voltage drain current IDSS

VDS=500V, VGS=0V,

µA

Tj=25°C

-

0.1

1

Tj=150°C

-

-

100

Gate-source leakage current

I GSS

Drain-source on-state resistance RDS(on)

VGS=20V, VDS=0V

VGS=10V, ID=10A

Tj=25°C

Tj=150°C

-

- 100 nA

Ω

- 0.25 0.28

- 0.68 -

Gate input resistance

RG

f=1MHz, open drain

-

1.5

-

Rev. 2.1

Page 2

2004-04-07

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