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VS-1N3213 데이터 시트보기 (PDF) - Vishay Semiconductors

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VS-1N3213
Vishay
Vishay Semiconductors Vishay
VS-1N3213 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
VS-1N3208 Series
Vishay Semiconductors
Silicon Rectifier Diodes,
(Stud Version) 15 A
FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
PRIMARY CHARACTERISTICS
IF(AV)
Package
15 A
DO-5 (DO-203AB)
Circuit configuration
Single
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IFSM
I2t
I2t
VRRM
TJ
Note
(1) JEDEC® registered values
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
15 (1)
150 (1)
239
250 (1)
286
260
3870
50 to 600
-65 to +175
UNITS
A
°C
A
A2s
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N3208
VS-1N3209
VS-1N3210
VS-1N3211
VS-1N3212
VS-1N3213
VS-1N3214
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE VRM, MAXIMUM DIRECT REVERSE VOLTAGE
(TJ = -65 °C TO 175 °C)
(TJ = -65 °C TO 175 °C)
V
V
50 (1)
50 (1)
100 (1)
100 (1)
200 (1)
200 (1)
300 (1)
300 (1)
400 (1)
400 (1)
500 (1)
500 (1)
600 (1)
600 (1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
(1) JEDEC® registered values
Revision: 11-Jan-18
1
Document Number: 93496
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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