STFI7N80K5 데이터 시트보기 (PDF) - STMicroelectronics

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STFI7N80K5

N-channel 800 V, 0.95 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

STMicroelectronics 

Electrical characteristics

STF7N80K5, STFI7N80K5

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

IGSS

VGS(th)

RDS(on)

Gate body leakage current

Gate threshold voltage

Static drain-source

on-resistance

VGS = 0 V, VDS = 800 V

VGS = 0 V, VDS = 800 V

TC = 125 °C (1)

VDS = 0 V, VGS = ±20 V

VDD = VGS, ID = 100 µA

VGS = 10 V, ID = 3 A

Min. Typ. Max. Unit

800

V

1 µA

50 µA

±10 µA

3

4

5

V

0.95 1.2 Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Ciss Input capacitance

Coss Output capacitance

Crss

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

Co(tr)(1)

Co(er)(2)

Equivalent capacitance time

related

Equivalent capacitance

energy related

VDS = 0 to 640 V, VGS = 0 V

Rg Intrinsic gate resistance

f = 1 MHz, ID=0 A

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 6 A

VGS= 0 to 10 V

(see Figure 16: "Test circuit

for gate charge behavior")

Min. Typ. Max. Unit

- 360 - pF

-

30

-

pF

-

1

- pF

- 47

-

pf

- 20

-

pf

-

6

-

Ω

- 13.4 - nC

- 3.7 - nC

- 7.5 - nC

Notes:

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.

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DocID025377 Rev 2

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