BCP51(2008) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BCP51 Datasheet PDF : 15 Pages
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NXP Semiconductors
BC636; BCP51; BCX51
45 V, 1 A PNP medium power transistors
103
Zth(j-a)
(K/W)
duty cycle =
102
1.0
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
006aaa818
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = −30 V; IE = 0 A
current
VCB = −30 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = −5 V; IC = 0 A
current
-
-
−100 nA
-
-
−10 µA
-
-
−100 nA
hFE
VCEsat
VBE
Cc
DC current gain
VCE = −2 V
IC = −5 mA
63 -
IC = −150 mA
63 -
IC = −500 mA
[1] 40
-
DC current gain
VCE = −2 V
hFE selection -10
IC = −150 mA
63 -
hFE selection -16
IC = −150 mA
100 -
collector-emitter
saturation voltage
IC = −500 mA;
IB = −50 mA
[1] -
-
base-emitter voltage VCE = −2 V; IC = −500 mA [1] -
-
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
15
f = 1 MHz
-
250
-
160
250
−0.5 V
−1 V
-
pF
fT
transition frequency VCE = −5 V; IC = −50 mA;
-
145 -
MHz
f = 100 MHz
[1] Pulse test: tp ≤ 300 µs; δ = 0.02.
BC636_BCP51_BCX51_8
Product data sheet
Rev. 08 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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