SPU04N60C3 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

SPU04N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPD04N60C3

SPU04N60C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 4.5 A, Tj = 125 °C

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Symbol

dv/dt

Value

50

Unit

V/ns

Symbol

RthJC

RthJA

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

2.5 K/W

-

-

75

-

-

75

-

-

50

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=4.5A

- 700

breakdown voltage

-V

-

Gate threshold voltage

VGS(th) ID=200µΑ, VGS=VDS 2.1

3

3.9

Zero gate voltage drain current IDSS

VDS=600V, VGS=0V,

µA

Tj=25°C,

-

0.5

1

Tj=150°C

-

-

50

Gate-source leakage current

I GSS

VGS=30V, VDS=0V

-

- 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=2.8A,

Ω

Tj=25°C

- 0.85 0.95

Tj=150°C

-

2.3

-

Gate input resistance

RG

f=1MHz, open Drain

-

0.95

-

Page 2

2003-10-02

Share Link: