BC558C 데이터 시트보기 (PDF) - ON Semiconductor

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BC558C

Amplifier Transistors

ON Semiconductor 

BC556B, BC557A, B, C, BC558B, C

1.0

0.7

0.5 D = 0.5

0.2

0.3

0.2

0.05

0.1

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

0.5

SINGLE PULSE

SINGLE PULSE

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1.0 2.0

5.0 10

20

50 100 200

t, TIME (ms)

Figure 13. Thermal Response

ZqJC(t) = (t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

500 1.0 k 2.0 k

5.0 k 10

−200

−100

−50

−10

−5.0

−2.0

−1.0

1s

3 ms

TA = 25°C TJ = 25°C

BC558

BC557

BC556

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

The safe operating area curves indicate IC−VCE limits of the

transistor that must be observed for reliable operation. Collector

load lines for specific circuits must fall below the limits indicated by

the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is

variable depending upon conditions. Pulse curves are valid for

duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be

calculated from the data in Figure 13. At high case or ambient

temperatures, thermal limitations will reduce the power than can

be handled to values less than the limitations imposed by second

breakdown.

−5.0 −10

−30 −45 −65 −100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Active Region − Safe Operating Area

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