SZBZX84CXXXET1G(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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SZBZX84CXXXET1G Datasheet PDF : 6 Pages
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BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1
0.00001
1
10
100
0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
+150C
+ 25C
− 55C
10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25C
10
10
TA = 25C
1
1
0.1
0.1
0.01 0
2
4
6
8
10
VZ, ZENER VOLTAGE (V)
12 0.0110
30
50
70
90
VZ, ZENER VOLTAGE (V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 9. 8 20 ms Pulse Waveform
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