MMBFJ310LT3G 데이터 시트보기 (PDF) - ON Semiconductor
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MMBFJ310LT3G Datasheet PDF : 5 Pages
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MMBFJ309LT1,
MMBFJ310LT1
JFET − VHF/UHF Amplifier
Transistor
N−Channel
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
Gate−Source Voltage
Gate Current
VDS
25
Vdc
VGS
25
Vdc
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
6x = Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBFJ309LT1 SOT−23 3,000 / Tape & Reel
MMBFJ309LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBFJ310LT1 SOT−23 3,000 / Tape & Reel
MMBFJ310LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
MMBFJ309LT1/D
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