HEF4585BT(2009) 데이터 시트보기 (PDF) - NXP Semiconductors.
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HEF4585BT Datasheet PDF : 15 Pages
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NXP Semiconductors
HEF4585B
4-bit magnitude comparator
11. Dynamic characteristics
Table 7. Dynamic characteristics
VSS = 0 V; Tamb = 25 °C; for test circuit see Figure 5 unless otherwise specified.
Symbol Parameter
Conditions
VDD
Extrapolation formula
tPHL
HIGH to LOW
An, Bn to Qn; 5 V [1] 133 ns + (0.55 ns/pF) CL
propagation delay see Figure 4 10 V
54 ns + (0.23 ns/pF) CL
15 V
37 ns + (0.16 ns/pF) CL
In to Qn;
see Figure 4
5V
10 V
83 ns + (0.55 ns/pF) CL
34 ns + (0.23 ns/pF) CL
15 V
22 ns + (0.16 ns/pF) CL
tPLH
LOW to HIGH
An, Bn to Qn; 5 V [1] 123 ns + (0.55 ns/pF) CL
propagation delay see Figure 4 10 V
49 ns + (0.23 ns/pF) CL
15 V
37 ns + (0.16 ns/pF) CL
In to Qn;
see Figure 4
5V
10 V
93 ns + (0.55 ns/pF) CL
39 ns + (0.23 ns/pF) CL
15 V
27 ns + (0.16 ns/pF) CL
tt
transition time
see Figure 4
5 V [1] 10 ns + (1.00 ns/pF) CL
10 V
9 ns + (0.42 ns/pF) CL
15 V
6 ns + (0.28 ns/pF) CL
Min Typ Max Unit
-
160 320 ns
-
65 130 ns
-
45 90 ns
-
110 220 ns
-
45 90 ns
-
30 60 ns
-
150 300 ns
-
60 120 ns
-
45 90 ns
-
120 240 ns
-
50 100 ns
-
35 70 ns
-
60 120 ns
-
30 60 ns
-
20 40 ns
[1] The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (CL in pF).
[2] Qn is QA>B, QA<B or QA=B
[3] In is IA>B, IA<B or IA=B
Table 8. Dynamic power dissipation PD
PD can be calculated from the formulas shown. VSS = 0 V; CL = 50 pF; tr = tf ≤ 20 ns; Tamb = 25 °C.
Symbol Parameter
VDD Typical formula for PD (µW)
where:
PD
dynamic power dissipation 5 V PD = 1250 × fi + Σ(fo × CL) × VDD2 fi = input frequency in MHz,
10 V PD = 5500 × fi + Σ(fo × CL) × VDD2 fo = output frequency in MHz,
15 V PD = 15000 × fi + Σ(fo × CL) × VDD2
CL = output load capacitance in pF,
VDD = supply voltage in V,
Σ(fo × CL) = sum of the outputs.
HEF4585B_4
Product data sheet
Rev. 04 — 10 August 2009
© NXP B.V. 2009. All rights reserved.
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