SPB11N60C3(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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SPB11N60C3
(Rev.:2001)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60C3, SPB11N60C3

Preliminary data

SPI11N60C3

Cool MOS™=Power Transistor

Feature

•=New revolutionary high voltage technology

• Worldwide best RDS(on) in TO 220

• Ultra low gate charge

•=Periodic avalanche rated

• Extreme dv/dt rated

•=High peak current capability

P-TO262-3-1

•=Improved transconductance

•=150 °C operating temperature

COOLMOS

Power Semiconductors

Product Summary

VDS @ Tjmax 650 V

RDS(on)

0.38 Ω

ID

11 A

P-TO263-3-2

P-TO220-3-1

Type

SPP11N60C3

SPB11N60C3

SPI11N60C3

Package

P-TO220-3-1

P-TO263-3-2

P-TO262-3-1

Ordering Code

Q67040-S4395

Q67040-S4396

Q67042-S4403

Marking

11N60C3

11N60C3

11N60C3

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax1)

ID=11A, VDD=50V

ID puls

EAS

EAR

Avalanche current, repetitive tAR limited by Tjmax

Reverse diode dv/dt

IAR

dv/dt

IS=11A, VDS <=VDD, di/dt=100A/µs, Tjmax=150°C

Gate source voltage static

Gate source voltage dynamic

Power dissipation, TC = 25°C

Operating and storage temperature

VGS

VGS

Ptot

Tj , Tstg

Value

11

7

33

340

0.6

11

6

±20

±30

125

-55... +150

Unit

A

mJ

A

V/ns

V

W

°C

Page 1

2001-07-05

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