SPB11N60C3(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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SPB11N60C3
(Rev.:2001)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60C3, SPB11N60C3

Preliminary data

SPI11N60C3

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

Linear derating factor

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

RthJA

Tsold

-

-

1 K/W

-

-

62

-

-

62

-

35

-

-

-

1 W/K

-

- 260 °C

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=0.25mA

Drain-source avalanche breakdown voltage

VGS=0V, ID=11A

Gate threshold voltage, VGS = VDS

ID = 0.5 mA

Zero gate voltage drain current

VDS = 600 V, VGS = 0 V, Tj = 25 °C

VDS = 600 V, VGS = 0 V, Tj = 150 °C

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=10V, ID=7A, Tj=25°C

VGS=10V, ID=7A, Tj=150°C

V(BR)DSS 600

-

V(BR)DS

-

700

VGS(th)

2.1

3

IDSS

IGSS

-

-

-

-

-

-

RDS(on)

- 0.34

-

1.1

Gate input resistance

f = 1 MHz, open drain

RG

- 0.86

-V

-

3.9

µA

25

250

100 nA

Ω

0.38

1.22

-

1Repetitve avalanche causes additional power losses that can be calculated asPAV =EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2001-07-05

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