SPB11N60C3(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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SPB11N60C3
(Rev.:2001)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60C3, SPB11N60C3

Preliminary data

SPI11N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max ,

-

8.3

-S

ID=7A

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Effective output capacitance, 1) Co(er)

energy related

Effective output capacitance, 2) Co(tr)

time related

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

VDS=0V to 480V

- 1460 - pF

- 610 -

-

21

-

-

45

- pF

-

85

-

Turn-on delay time

Rise time

Turn-off delay time

Fall time

t d(on)

VDD=380V, VGS=0/10V,

-

tr

ID=11A, RG=6.8Ω

-

t d(off)

-

tf

-

10

- ns

5

-

44 70

5

9

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Qgs

Qgd

Qg

VDD=480V, ID=11A

VDD=480V, ID=11A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=480V, ID=11A

-

5.5

- nC

-

22

-

-

45 60

-

5.5

-V

1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Page 3

2001-07-05

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