SPB11N60C3(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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SPB11N60C3
(Rev.:2001)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60C3, SPB11N60C3

Preliminary data

SPI11N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Characteristics

Inverse diode continuous

forward current

IS

TC=25°C

-

-

11 A

Inverse diode direct current,

ISM

pulsed

-

-

33

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

VSD

trr

Qrr

Irrm

dirr/dt

VGS=0V, IF=IS

VR=480V, IF=IS ,

diF/dt=100A/µs

-

1 1.2 V

- 400 600 ns

-

6

- µC

-

41

-A

- 1200 - A/µs

Transient Thermal Characteristics

Symbol

Value

Unit

typ.

Thermal resistance

Rth1

0.015

K/W

Rth2

0.034

Rth3

0.056

Rth4

0.124

Rth5

0.143

Rth6

0.057

Symbol

Value

typ.

Thermal capacitance

Cth1

0.0002121

Cth2

0.0007091

Cth3

0.001184

Cth4

0.00254

Cth5

0.011

Cth6

0.092

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th,n

Tamb

Page 4

2001-07-05

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