STP10N65K3(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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STP10N65K3
(Rev.:2012)

N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

STMicroelectronics 

STF10N65K3, STFI10N65K3, STP10N65K3

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 310 V, ID = 3.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17)

Min. Typ. Max Unit

14.5

ns

14

-

44

ns

-

ns

35

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 7 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100A/µs

VDD = 60 V (see Figure 22)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

7.2 A

-

28.8 A

-

1.5 V

320

ns

-

2

µC

13

A

410

ns

- 2.9

µC

14

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

V(BR)GSO

Gate-source breakdown

voltage

Igs=± 1 mA, ID=0

Min. Typ. Max. Unit

30 -

-V

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Doc ID 15732 Rev 3

5/17

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