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MIAA10WD600TMH 데이터 시트보기 (PDF) - IXYS CORPORATION

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MIAA10WD600TMH
IXYS
IXYS CORPORATION IXYS
MIAA10WD600TMH Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Advanced Technical Information
MIAA10WD600TMH
Input Rectifier Bridge D8 - D11
Symbol
VRRM
IFAV
IDAVM
IFSM
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. forward surge current
I2t
I2t value for fusing
Ptot
total power dissipation
VF
forward voltage
IR
reverse current
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
Temperature Sensor NTC
Symbol
R25
B25/50
Definitions
resistance
Module
Symbol
TVJ
TVJM
Tstg
VISOL
CTI
FC
dS
dA
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting force
creep distance on surface
strike distance through air
Equivalent Circuits for Simulation
I
V0
Symbol
V0
R0
V0
R0
V0
R0
R0
Definitions
rectifier diode
IGBT
free wheeling diode
Conditions
sine 180°
rect.; d = ½
t = 10 ms; sine 50 Hz
t = 10 ms; sine 50 Hz
IF = 30 A
VR = VRRM
(per diode)
(per diode)
Conditions
Conditions
IISOL < 1 mA; 50/60 Hz
Conditions
D8 - D11
T1 - T6
D1 - D6
TVJ = 25°C
TC = 80°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
min.
Ratings
typ. max. Unit
1600 V
22 A
23 A
270 A
tbd A
365 A2s
tbd A2s
50 W
1.35 1.6 V
1.35
V
0.01 mA
0.3
mA
2.1 K/W
0.7
K/W
TC = 25°C
Ratings
min. typ. max. Unit
4.75 5.0 5.25 kW
3375
K
min.
-40
-40
40
12.7
12
Ratings
typ. max. Unit
125 °C
150 °C
125 °C
2500 V~
-
80 N
mm
mm
35
g
TVJ = 125°C
TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max. Unit
0.9
V
16
mW
1.0
V
125
mW
1.05
V
35
mW
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
TC = 25°C unless otherwise stated
20070404a
-7

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