MIAA10WD600TMH 데이터 시트보기 (PDF) - IXYS CORPORATION
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MIAA10WD600TMH Datasheet PDF : 7 Pages
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Advanced Technical Information
MIAA10WD600TMH
18
17 Ic = 10A
Vce = 300V
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Qg [nC]
Typical turn on gate charge
1.2
Eon
1.1
Eof f
1
Erec
Vce = 300V
0.9 Vge = +/-15V
Rg = 82W
0.8 Tvj = 125°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 2 4 6 8 10 12 14 16 18 20 22
Ic, If [A]
Typical switching energy versus collector current
0.8
Eon
Eof f
0.7
Erec
0.6 Ic, If = 10A
Vce = 300V
Vge = +/-15V
0.5 Tvj = 125°C
0.4
0.3
0.2
0.1
0
50 75 100 125 150 175 200 225 250 275 300 325 350
Rg [W ]
Typical switching energy versus gate resistance
11
10.5
10
9.5
330W
160
Irr If = 10A
Vce = 300V
155
trr Vge = +/-15V 150
Tvj = 125°C
145
9
140
8.5
135
82W
8
130
7.5
125
150W
7
120
6.5
115
6
150W
110
5.5
5
330W
4.5
105
82W
100
95
4
90
125 150 175 200 225 250 275 300 325
dif/dt [A/µs]
Typical turn-off characteristics of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
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20070404a
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