SPI12N50C3 데이터 시트보기 (PDF) - Infineon Technologies
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SPI12N50C3 Datasheet PDF : 13 Pages
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SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP12N50C3
A
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
11
A
9
8
10 1
7
6
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
5
T j(START) =25°C
4
3
T j(START) =125°C
2
1
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
15 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
350
mJ
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP12N50C3
600
V
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20
20
60 100 °C
180
Tj
Rev. 2.1
Page 8
2004-03-29
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