STL13NM60N 데이터 시트보기 (PDF) - STMicroelectronics

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STL13NM60N

N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL13NM60N

N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II

Power MOSFET in a PowerFLAT™ 8x8 HV package

Datasheet - production data

Features

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Order code VDS @ Tjmax

STL13NM60N 650 V

RDS(on) max.

0.385 Ω

ID

10 A

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications

Figure 1. Internal schematic diagram

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Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

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Order code

STL13NM60N

Table 1. Device summary

Marking

Packages

13NM60N

PowerFLAT™ 8x8 HV

Packaging

Tape and reel

November 2013

This is information on a product in full production.

DocID018870 Rev 2

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