DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SI8715BD-A-IS 데이터 시트보기 (PDF) - Silicon Laboratories

부품명
상세내역
제조사
SI8715BD-A-IS
Silabs
Silicon Laboratories Silabs
SI8715BD-A-IS Datasheet PDF : 36 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Si871x/2x
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
VDD Supply Voltage
Input Current
Operating Temperature (Ambient)
Symbol
Min
Typ
Max
Unit
VDD
2.5
5.5
V
IF(ON)
6
(See Figure 1)
30
mA
TA
–40
125
°C
Table 2. Electrical Characteristics
VDD = 5 V; GND = 0 V; TA = –40 to +125 °C; typical specs at 25 °C
Parameter
Symbol
Test Condition
Min
DC Parameters
Supply Voltage
VDD (VDD–GND)
2.5
Supply Current
IDD Output high or low
(VDD = 2.5 to 5.5 V)
Input Current Threshold IF(TH)
Input Current
IHYS
Hysteresis
Input Forward Voltage VF(OFF) Measured at ANODE with respect to
(OFF)
CATHODE.
Input Forward Voltage VF(ON) Measured at ANODE with respect to 1.4
(ON)
CATHODE.
Input Capacitance
CI f = 100 kHz,
VF = 0 V,
VF = 2 V
Logic Low Output
VOL IOL = 4 mA
Voltage
Logic High Output
Voltage
VOH IOH = –4 mA
VDD - 0.4
Output Impedance
Enable High Min
Enable Low Max
Enable High Current
Draw
ZO
VEH
VEL
IEH
VDD = VEH = 5 V
VDD - 0.4
Enable Low Current
IEL VDD =5 V, VEL = 0 V
Draw
UVLO Threshold +
VDDUV+
See Figure 8 on page 16.
VDD rising
UVLO Threshold –
VDDUV–
See Figure 8 on page 16.
VDD falling
UVLO lockout
hysteresis
VDDHYS
50
Typ
1.5
0.34
15
15
0.2
VDD -
0.2
50
0
–30
2.2
2
100
Max Unit
5.5
V
mA
3.6
mA
mA
1
V
2.8
V
pF
pF
0.4
V
V
V
0.4
V
µA
0
µA
2.35
V
2.25
V
mV
4
Rev. 1.0

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]