A28F010 데이터 시트보기 (PDF) - Intel

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A28F010

1024K (128K x 8) CMOS FLASH MEMORY

Intel 

A28F010

DC CHARACTERISTICS CMOS COMPATIBLE (Continued)

Symbol Parameter

Limits

Notes

Unit

Min Typical Max

Test Conditions

IPP2

VPP

12

Programming

Current

80

30

mA VPP e VPPH

Programming in Progress

IPP3

VPP Erase

12

Current

40

30

mA VPP e VPPH

Erasure in Progress

IPP4

VPP Program

12

Verify Current

20

50

mA VPP e VPPH Program

Verify in Progress

IPP5

VPP Erase Verify

12

Current

50

50

mA VPP e VPPH

Erase Verify in Progress

VIL

Input Low

Voltage

b0 5

08

V

VIH

Input High

Voltage

0 7 VCC

VCC a 0 5 V

VOL

VOH1

VOH2

VID

Output Low

Voltage

Output High

Voltage

0 85 VCC

VCC b 0 4

A9 Intelligent

Identifier Voltage

11 50

0 45

13 00

V IOL e 2 1 mA

VCC e VCC Min

V

IOH e b2 5 mA

VCC e VCC Min

IOH e b100 mA

VCC e VCC Min

V

IID

IID

VPPL

VPPH

VCC ID Current

VPP ID Current

VPP during Read-

Only Operations

VPP during

Read Write

Operations

1

1

0 00

11 40

10

30

mA A9 e ID

90

500

mA A9 e ID

65

V NOTE Erase Programs

are Inhibited when

VPP e VPPL

12 60

V

VLKO

VCC Erase Write

25

V

Lock Voltage

CAPACITANCE(3) TA e 25 C f e 1 0 MHz

Symbol

Parameter

Limits

Min

Max

Unit

Conditions

CIN

COUT

Address Control Capacitance

Output Capacitance

8

pF

VIN e 0V

12

pF

VOUT e 0V

NOTES

1 All currents are in RMS unless otherwise noted Typical values at VCC e 5 0V VPP e 12 0V Te 25 C

2 Not 100% tested characterization data available

3 Sampled not 100% tested

4 ‘‘Typicals’’ are not guaranteed but are based on a limited number of samples from production lots

15

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