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EMIF03-SIM05F3 데이터 시트보기 (PDF) - STMicroelectronics

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EMIF03-SIM05F3
ST-Microelectronics
STMicroelectronics ST-Microelectronics
EMIF03-SIM05F3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
EMIF03-SIM05F3
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
Value
Unit
Internal pins (A3, B3, C3):
ESD discharge IEC 61000-4-2(1), level 1
Air discharge
Contact discharge
VPP External pins (A1, A2, B1, C1, C2):
ESD discharge IEC 61000-4-2, level 4
Air discharge
Contact discharge
2
2
kV
16
16
Tj Maximum junction temperature
150
Top Operating temperature range
- 30 to + 85
°C
Tstg Storage temperature range
- 55 to 150
1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353,
“IEC 61000-4-2 standard testing”.
Figure 3. Electrical characteristics (definitions)
I
Symbol Parameter
VBR = Breakdown voltage
IRM = Leakage current @ VRM
VRM =
VCL =
Stand-off voltage
Clamping voltage
VCLVBR VRM
IRM
V
IPP = Peak pulse current
IPP
Table 2. Electrical characteristics (Tamb = 25 °C)
Symbol
Test conditions
Min. Typ. Max. Unit
IRM
VBR
R1, R3
R2
VRM = 3 V
IR = 1 mA
RST, DATA serial resistor
CLK serial resistor
Cline
Line capacitance on RST, DATA, CLK lines
Vline = 0 V, Vosc = 30 mV, F = 1 MHz
(measured under zero light conditions)
CSWP
Line capacitance on SWP line
Vline = 0 V, Vosc = 30 mV, F = 1 MHz
(measured under zero light conditions)
100
nA
6
V
100
47
12
pF
2
3
pF
2/9
Doc ID 023284 Rev 1

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